? semiconductor components industries, llc, 2003 march, 2003 ? rev. 0 1 publication order number: smf5.0at1/d smf5.0at1 series zener transient voltage suppressor sod-123 flat lead package the smf5.0a series is designed to protect voltage sensitive components from high voltage, high energy transients. excellent clamping capability, high surge capability, low zener impedance and fast response time. because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. specification features: ? stand?off voltage: 5 ? 170 volts ? peak power ? 200 watts @ 1 ms (smf5.0a ? smf58a) peak power ? 175 watts @ 1 ms (smf60a ? smf170a) ? maximum clamp voltage @ peak pulse current ? low leakage ? response time is typically < 1 ns ? esd rating of class 3 (> 16 kv) per human body model iec61000?4?2 level 4 esd protection iec61000?4?4 40 a esd protection ? low profile ? maximum height of 1.0 mm ? small footprint ? footprint area of 8.45 mm 2 ? supplied in 8 mm tape and reel ? 3,000 units per reel ? cathode indicated by polarity band mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic epoxy meets ul94, vo lead finish: 100% matte sn (tin) mounting position: any qualified max reflow temperature: 260 c device meets msl 1 requirements plastic surface mount zener overvoltage transient suppressor 5 ? 170 volts 200 watt peak power device package shipping ordering information smfxxxat1 sod?123fl 3,000/tape & reel 12 1: cathode 2: anode lead orientation in tape: cathode lead to sprocket holes http://onsemi.com sod?123fl case 498 plastic marking diagram 1 cathode 2 anode xx d xx = specific device code d = date code
uni?directional tvs i pp i f v i i r i t v rwm v c v br v f smf5.0at1 series http://onsemi.com 2 maximum ratings rating symbol value unit maximum p pk dissipation (pw?10/1000 s) (note 1) smf60a ? smf170a p pk 175 w maximum p pk dissipation (pw?10/1000 s) (note 1) smf5.0a ? smf58a p pk 200 w maximum p pk dissipation @ t a = 25 c, (pw?8/20 s) (note 2) p pk 1000 w dc power dissipation @ t a = 25 c (note 3) derate above 25 c thermal resistance from junction to ambient (note 3) p d r q ja 385 4.0 325 mw mw/ c c/w thermal resistance from junction to lead (note 3) r q jcathode 26 c/w operating and storage temperature range t j , t stg ?55 to +150 c 1. non?repetitive current pulse at t a = 25 c, per waveform of figure 2. 2. non?repetitive current pulse at t a = 25 c, per waveform of figure 3. 3. mounted with recommended minimum pad size, dc board fr?4. electrical characteristics (t a = 25 c unless otherwise noted, v f = 3.5 v max. @ i f (note 4) = 12 a) symbol parameter i pp maximum reverse peak pulse current v c clamping voltage @ i pp v rwm working peak reverse voltage i r maximum reverse leakage current @ v rwm v br breakdown voltage @ i t i t test current i f forward current v f forward voltage @ i f 4. 1/2 sine wave (or equivalent square wave), pw = 8.3 ms, duty cycle = 4 pulses per minute maximum.
smf5.0at1 series http://onsemi.com 3 electrical characteristics (t l = 30 c unless otherwise noted, v f = 1.25 volts @ 200 ma) v rwm (v) v br @ i t (v) (note 6) i t i r @ v rwm v c(max) i pp(max) (a) device marking (note 5) min nom max (ma) ( a) (v) (note 7) smf5.0a ke 5 6.4 6.7 7 10 400 9.2 21.7 smf6.0a kg 6 6.67 7.02 7.37 10 400 10.3 19.4 smf6.5a kk 6.5 7.22 7.6 7.98 10 250 11.2 17.9 smf7.0a km 7 7.78 8.2 8.6 10 100 12 16.7 smf7.5a kp 7.5 8.33 8.77 9.21 1 50 12.9 15.5 smf8.0a kr 8 8.89 9.36 9.83 1 25 13.6 14.7 smf8.5a kt 8.5 9.44 9.92 10.4 1 10 14.4 13.9 smf9.0a kv 9 10 10.55 11.1 1 5 15.4 13.0 SMF10A kx 10 11.1 11.7 12.3 1 2.5 17 11.8 smf11a kz 11 12.2 12.85 13.5 1 2.5 18.2 11.0 smf12a le 12 13.3 14 14.7 1 2.5 19.9 10.1 smf13a lg 13 14.4 15.15 15.9 1 1 21.5 9.3 smf14a lk 14 15.6 16.4 17.2 1 1 23.2 8.6 smf15a lm 15 16.7 17.6 18.5 1 1 24.4 8.2 smf16a lp 16 17.8 18.75 19.7 1 1 26 7.7 smf17a lr 17 18.9 19.9 20.9 1 1 27.6 7.2 smf18a lt 18 20 21 22.1 1 1 29.2 6.8 smf20a lv 20 22.2 23.35 24.5 1 1 32.4 6.2 smf22a lx 22 24.4 25.6 26.9 1 1 35.5 5.6 smf24a lz 24 26.7 28.1 29.5 1 1 38.9 5.1 smf26a me 26 28.9 30.4 31.9 1 1 42.1 4.8 smf28a mg 28 31.1 32.8 34.4 1 1 45.4 4.4 smf30a mk 30 33.3 35.1 36.8 1 1 48.4 4.1 smf33a mm 33 36.7 38.7 40.6 1 1 53.3 3.8 smf36a mp 36 40 42.1 44.2 1 1 58.1 3.4 smf40a mr 40 44.4 46.8 49.1 1 1 64.5 3.1 smf43a mt 43 47.8 50.3 52.8 1 1 69.4 2.9 smf45a mv 45 50 52.65 55.3 1 1 72.7 2.8 smf48a mx 48 53.3 56.1 58.9 1 1 77.4 2.6 smf51a mz 51 56.7 59.7 62.7 1 1 82.4 2.4 smf54a ne 54 60 63.15 66.3 1 1 87.1 2.3 smf58a ng 58 64.4 67.8 71.2 1 1 93.6 2.1 smf60a nk 60 66.7 70.2 73.7 1 1 96.8 1.8 smf64a nm 64 71.1 74.85 78.6 1 1 103 1.7 smf70a np 70 77.8 81.9 86 1 1 113 1.5 smf75a nr 75 83.3 87.7 92.1 1 1 121 1.4 smf78a nt 78 86.7 91.25 95.8 1 1 126 1.4 smf85a nv 85 94.4 99.2 104 1 1 137 1.3 smf90a nx 90 100 105.5 111 1 1 146 1.2 smf100a nz 100 111 117 123 1 1 162 1.1 smf110a pe 110 122 128.5 135 1 1 177 1.0 smf120a pg 120 133 140 147 1 1 193 0.9 smf130a pk 130 144 151.5 159 1 1 209 0.8 smf150a pm 150 167 176 185 1 1 243 0.7 smf160a pp 160 178 187.5 197 1 1 259 0.7 smf170a pr 170 189 199 209 1 1 275 0.6 5. a transient suppressor is normally selected according to the working peak reverse voltage (v rwm ) which should be equal to or greater than the dc or continuous peak operating voltage level. 6. v br measured at pulse test current i t at ambient temperature of 25 c. 7. surge current waveform per figure 2 and derate per figure 3.
smf5.0at1 series http://onsemi.com 4 t p , pulse width ( s) 100 1000 10,000 1.0 10 100 10 01234 0 50 100 t, time (ms) value (%) half value ? i rsm 2 peak value ? i rsm t r typical protection circuit v in v l z in load t p pulse width (t p ) is defined as that point where the peak current decays to 50% of i rsm . figure 1. pulse rating curve figure 2. 10 x 1000 s pulse waveform 1000 10,000 figure 3. 8 x 20 s pulse waveform p p , peak power (watts) t r 10 m s 100 80 60 40 20 0 0 25 50 75 100 125 150 t a , ambient temperature ( c) 120 140 160 figure 4. pulse derating curve peak pulse derating in % of peak power or current @ t a = 25 c 100 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) % of peak pulse current t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s peak value i rsm @ 8 s half value i rsm /2 @ 20 s
smf5.0at1 series http://onsemi.com 5 1.2 1.0 0.8 0.6 0.4 0.2 0 ?55 25 85 150 t, temperature ( c) v , typical forward voltage (volts) f 25 50 75 100 125 175 2.5 2 1.5 1 0 t, temperature ( c) p , maximum power dissipation (w) d 0.5 t l 150 3 1000 100 1 1 10 1000 working peak reverse voltage (volts) c, capacitance (pf) measured @ 50% v rwm measured @ zero bias figure 5. typical derating factor for duty cycle derating factor 1 ms 10 m s 1 0.7 0.5 0.3 0.05 0.1 0.2 0.01 0.02 0.03 0.07 100 m s 0.1 0.2 0.5 2 5 10 50 1 20 100 d, duty cycle (%) pulse width 10 ms figure 6. steady state power derating figure 7. forward voltage figure 8. capacitance versus working peak reverse voltage 10 100
smf5.0at1 series http://onsemi.com 6 information for using the sod?123 flat lead surface mount package minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. recommended footprint for sod?123fl mm inches 0.91 0.036 1.22 0.048 2.36 0.093 4.19 0.165 powermite power dissipation the power dissipation of the sod?123 flat lead is a function of the mounting pad size. this can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. power dissipation for a surface mount device is determined by t j(max) , the maximum rated junction temperature of the die, r q ja , the thermal resistance from the device junction to ambient, and the operating temperature, t a . using the values provided on the data sheet for the sod?123 flat lead package, p d can be calculated as follows: p d = t j(max) ? t a r q ja the values for the equation are found in the maximum ratings table on the data sheet. substituting these values into the equation for an ambient temperature t a of 25 c, one can calculate the power dissipation of the device which in this case is 385 milliwatts. p d = 150 c ? 25 c = 385 milliwatts 325 c/w the 325 c/w for the sod?123 flat lead package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 385 milliwatts. there are other alternatives to achieving higher power dissipation from the sod?123 flat lead package. another alternative would be to use a ceramic substrate or an aluminum core board such as thermal clad ? . using a board material such as thermal clad, an aluminum core board, the power dissipation can be doubled using the same footprint. soldering precautions the melting temperature of solder is higher than the rated temperature of the device. when the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. ? always preheat the device. ? the delta temperature between the preheat and soldering should be 100 c or less.* ? when preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. when using infrared heating with the reflow soldering method, the difference shall be a maximum of 10 c. ? the soldering temperature and time shall not exceed 260 c for more than 10 seconds. ? when shifting from preheating to soldering, the maximum temperature gradient shall be 5 c or less. ? after soldering has been completed, the device should be allowed to cool naturally for at least three minutes. gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. ? mechanical stress or shock should not be applied during cooling. * soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
smf5.0at1 series http://onsemi.com 7 outline dimensions transient voltage suppressor ? surface mounted sod?123fl case 498?01 issue o notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimensions a and b do not include mold flash. 4. dimensions d and j are to be measured on flat section of the lead: between 0.10 and 0.25 mm from the lead tip. a b k d c h e l j l dim min max min max inches millimeters a 1.50 1.80 0.059 0.071 b 2.50 2.90 0.098 0.114 c 0.90 1.00 0.039 d 0.70 1.10 0.028 0.043 e 0.55 0.95 0.022 0.037 h 0.00 0.10 0.000 0.004 j 0.10 0.20 0.004 0.008 k 3.40 3.80 0.134 0.150 l 0 8 0 8 polarity indicator optional as needed 0.035 200 watt peak power
smf5.0at1 series http://onsemi.com 8 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indem nify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and re asonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employ er. publication ordering information japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. smf5.0at1/d thermal clad is a registered trademark of the bergquist company. literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : onlit@hibbertco.com n. american technical support : 800?282?9855 toll free usa/canada
|
